feature z collector-base voltage z complement to c945 maximum ratings(t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo i c = -5ua,i e =0 -60 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v(br) ebo i e = -50ua, i c =0 -5 v collector cut-off current i cbo v cb = -60 v , i e =0 -0.1 ua emitter cut-off current i ebo v eb = -5 v , i c =0 -0.1 ua dc current gain h fe v ce = -6 v, i c = -1ma 120 475 collector-emitter saturation voltage v ce (sat) i c = -100ma, i b =- 10ma -0.18 -0.3 v base-emitter voltage v be(on) v ce =-6v,i c =-1.0ma -0.58 -0.62 -0.68 v transition frequency f t v ce =-6v,i c =-10ma 50 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mh z 4.5 7 pf noise figure nf v ce =-6v,i c =-0.3ma, rg=10k ? ,f=100h z 6 20 db classification of h fe rank l h range 120-220 220-475 marking cs so t -23 1. base 2. emitter 3. collector A733 1 date:2011/05 www.htsemi.com semiconductor jinyu transistor (pnp)
typical characteristics A733 2 date:2011/05 www.htsemi.com semiconductor jinyu
|
